Gpixel announced on December 2nd the launch of two high-speed, high-sensitivity back illuminated TDI CMOS image sensors: GLT5008BSI and GLT5016BSI.
These two products adopt a more optimized design, with higher line frequency, higher quantum efficiency, better on-chip integration, and better matching the application needs of industries such as semiconductor wafer inspection, FPD inspection, high-throughput gene sequencing, and bioluminescence imaging.
GLT5008BSI and GLT5016BSI are designed based on the same architecture, using a 5 μ m charge domain TDI pixel design and on-chip integration of two spectral bands with integration levels of 256 and 32, respectively.
The GLT5008BSI has an effective resolution of 8208 pixels and supports 10 bit and 12 bit ADC outputs. The highest line frequencies can reach 1M Hz and 500k Hz, respectively; The effective resolution of GLT5016BSI is 16416 pixels, and its highest line frequency can reach 500k Hz.
GLT5008BSI/GLT5016BSI are optimized for ARC design based on different applications, including UV spectrum optimization design and VIS spectrum optimization design.
GLT5016BSI is a back illuminated (BSI), time delayed integration (TDI), charge domain CMOS image sensor with a horizontal effective resolution of 16416 and a pixel size of 5 μ m.
GLT5008BSI is a back illuminated (BSI), time delayed integration (TDI), charge domain CMOS image sensor with an effective horizontal resolution of 8208 and a pixel size of 5 μ m.
